Carbon Nanotubes as Schottky Barrier Transistors
نویسندگان
چکیده
منابع مشابه
Analytical model of 1D Carbon-based Schottky-Barrier Transistors
Nanotransistors typically operate in far-fromequilibrium (FFE) conditions, that cannot be described neither by drift-diffusion, nor by purely ballistic models. In carbonbased nanotransistors, source and drain contacts are often characterized by the formation of Schottky Barriers (SBs), with strong influence on transport. Here we present a model for onedimensional field-effect transistors (FETs)...
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2002
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.89.106801